Published March 2008
| Version v1
Journal article
Growth and spectral sensitivity of pSi-n(Si2)1-x(ZnSe)x structure
- 1. Physical-Technical Institute, Tashkent (Uzbekistan)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Выращивание и спектральная чувствительност' пси-н(Си
Publishing Information
- Journal Title
- Geliotekhnika
- Journal Issue
- no.2
- Journal Page Range
- p. 105-107
- ISSN
- 0130-0997
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 40047886
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CRYSTAL GROWTH; N-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECT; SILICON; SPECTRAL RESPONSE; X-RAY DETECTION; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; DETECTION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; RADIATION DETECTION; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SENSITIVITY; ZINC COMPOUNDS
Optional Information
- Notes
- 7 refs, 1 fig.