Published October 1987
| Version v1
Journal article
High-efficiency semiconductor thermal-neutron detectors
Creators
Description
The authors examine two methods to upgrade the detection efficiency of thermal neutron semiconductor detectors. The first of these involves increasing the number of semiconductor detection and neutron conversion layers in the sandwich while the second is based on the use of semiconductor crystals with an extended surface. They incorporate both methods into a design program for a detector which is shown to achieve, using lithium 6 and boron 10 as conversion materials, thermal neutron detection efficiencies of 40 percent and higher
Additional details
Publishing Information
- Journal Title
- Sov. At. Energy (Engl. Transl.)
- Journal Volume
- 62
- Journal Issue
- 4
- Series
- Sov. At. Energy (Engl. Transl.).
- Journal Page Range
- 316-319
- ISSN
- 0038-531X
- CODEN
- SATEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19029139
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BORON 10 TARGET; EFFICIENCY; LITHIUM 6 TARGET; MATERIALS TESTING; NEUTRON DETECTION; NEUTRON DETECTORS; NEUTRON REACTIONS; OPTIMIZATION; POLYVINYLS; SEMICONDUCTOR DETECTORS; SPECIFICATIONS; THERMAL NEUTRONS; THICKNESS; THIN FILMS
- Descriptors DEC
- BARYON REACTIONS; BARYONS; DETECTION; DIMENSIONS; ELEMENTARY PARTICLES; FERMIONS; FILMS; HADRON REACTIONS; HADRONS; MEASURING INSTRUMENTS; NEUTRONS; NUCLEAR REACTIONS; NUCLEON REACTIONS; NUCLEONS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; POLYMERS; RADIATION DETECTION; RADIATION DETECTORS; TARGETS; TESTING
Optional Information
- Notes
- Translated from At. Energ.; 62: No. 4, 265-267(Apr 1987).