Published 2001
| Version v1
Miscellaneous
Physical-chemical etching of GaN layers on sapphire
Creators
- 1. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw (Poland)
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Oficyna Wydawnicza Politechniki Warszawskiej
- ISBN
- 0-7803-7136-4
- Imprint Title
- Abstracts of 3. International Conference Novel Applications of Wide Bandgap Layers
- Imprint Pagination
- 207 p.
- Journal Page Range
- p. 159-160
Conference
- Title
- Novel Applications of Wide Bandgap Layers
- Acronym
- 3. International Conference
- Dates
- 26-30 Jun 2001
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 33033803
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM OXIDES; ETCHING; GALLIUM NITRIDES; ION BEAMS; KINETICS; PLASMA; RADIOWAVE RADIATION; SAPPHIRE; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; BEAMS; CHALCOGENIDES; CORUNDUM; ELECTROMAGNETIC RADIATION; FILMS; GALLIUM COMPOUNDS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RADIATIONS; SURFACE FINISHING
Optional Information
- Notes
- 1 fig