Exploration of GaAs structures with π-ν junction for coordinate sensitive detectors

The results of a systematic study of GaAs samples as the basis for the construction of radiation resistant coordinate sensitive detectors are presented. The technology to manufacture high resistivity GaAs layers has been optimized. As a result we have produced samples with charge collection efficiency greater than 95% and with a time response of less than a few ns for minimum ionizing particle detection. The study of the radiation resistance of the GaAs samples has shown that their main characteristics degrade by less than by 20% at a neutron fluence of the order of 1015 cm-2 and do not worsen at a absorbed γ-dose of 11 Mrad. (orig.)