Published 2005 | Version v1
Miscellaneous Metadata-only

Optical gain modelling and calculation of a strained quantum well (Gax-In1-xAs/InP) laser diode

Creators

  • 1. Saad Dahled Univ., Blida (Algeria), Dept. of Electronics

Description

This work deals with an optical gain modeling of strained GaxIn1-xAs/InP quantum well laser diode. We have studied the influence of different parameters (gallium composition, well thickness, carriers injection, temperature, strain, ...) on the optical gain and we have plotted the maximum gain variation as a function of the transition energy. The most interesting result is in chewing the optical gain improvement caused by the strain on the active layer. (author)

Part of:
42. Science week: Laser Science and applications, Aleppo (SY), 2-4 Nov 2002, Book two: Laser science and medical laser applications

Additional details

Publishing Information

Publisher
Supreme Council of Sciences
Imprint Place
Damascus (Syrian Arab Republic)
Imprint Title
42. Science week: laser Science and Applications, Aleppo (SY). 2-4 Nov 2002, Book 2
Imprint Pagination
vp.
Journal Page Range
p. 91-105

Conference

Title
laser Science and Applications
Acronym
42. Science week
Dates
2-4 Nov 2002
Place
Aleppo (Syrian Arab Republic)

INIS

Country of Publication
Syrian Arab Republic
Country of Input or Organization
Syrian Arab Republic
INIS RN
38054186
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ARSENIDES; CARRIER DENSITY; ENERGY-LEVEL TRANSITIONS; GAIN; GALLIUM COMPOUNDS; INDIUM PHOSPHIDES; QUANTUM ELECTRONICS; QUANTUM WELLS; SEMICONDUCTOR LASERS; STRAINS; TEMPERATURE DEPENDENCE; THICKNESS
Descriptors DEC
AMPLIFICATION; ARSENIC COMPOUNDS; DIMENSIONS; INDIUM COMPOUNDS; LASERS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS

Optional Information

Notes
8 refs., 5 figs.