Published July 12, 2019 | Version v1
Journal article Metadata-only

Modeling selective-area growth of InAsSb nanowires

Creators

  • 1. ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg (Russian Federation)
  • 2. Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S4L7 (Canada)

Description

An analytical growth model is presented to explain the influence of antimony fractional flux on the morphology evolution of catalyst-free InAs1−xSbx semiconductor nanowires grown by the selective-area vapor–solid mechanism on a Si (111) substrate by molecular beam epitaxy. Increasing Sb fractional flux promoted radial growth and suppressed axial growth, resulting in 'nano-disks'. This behavior is explained by a model of indium adatom diffusion along nanowire facets. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/ab1375

Additional details

Identifiers

DOI
10.1088/1361-6528/ab1375;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
30
Journal Issue
28
Journal Page Range
[7 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51050937
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ANTIMONY; CATALYSTS; CRYSTAL GROWTH; DIFFUSION; INDIUM; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOWIRES; SEMICONDUCTOR MATERIALS; SIMULATION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; INDIUM COMPOUNDS; MATERIALS; METALS; NANOSTRUCTURES; PNICTIDES