The structural and electrical properties of Mn-doped Ba0.6Sr0.4TiO3 films prepared by metal organic deposition method
- 1. Luoyang Key Laboratory of Photonic and Electronic Materials, Luoyang 471023 (China)
- 2. School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023 (China)
- 3. Department of Mathematics and Science, Luoyang Institute of Science and Technology, Luoyang 471023 (China)
Description
Highlights: •Mn-doped Ba0.6Sr0.4TiO3 films (Mn ⩾10%) were prepared by MOD. •Mn dopant improves the dc leakage behavior and dielectric loss of the BST films. •The study provides another approach for adjusting material properties. -- Abstract: Both undoped and Mn-doped BST films are fabricated on (1 1 1) Pt/Ti/SiO2/Si by metal organic deposition. X-ray diffraction and atomic force microscopy reveal the microstructure of the samples. The effect of Mn dopant on structural and electrical properties is studied. It is found that the dc leakage behavior and dielectric loss of the BST films are greatly improved due to the change of the valence state of Mn ions. Meanwhile, the tunability of Mn-doped BST films is suppressed, and the possible causes of tunability dependence are discussed
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2013.04.154Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2013.04.154;
- PII
- S0925-8388(13)01075-X;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 576
- Journal Page Range
- p. 262-264
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45044381
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; DEPOSITION; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DOPED MATERIALS; FILMS; MANGANESE IONS; MICROSTRUCTURE; ORGANOMETALLIC COMPOUNDS; SILICON OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; IONS; MATERIALS; MICROSCOPY; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.