Published 1971
| Version v1
Report
Open
Junctions with exponential doping profile
- 1. Comitato Nazionale per l'Energia Nucleare, Casaccia (Italy). Centro di Studi Nucleari
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.Files
3022466.pdf
Files
(1.5 MB)
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Additional details
Additional titles
- Original title (Italian)
- Modello della giunzione con profilo di drogaggio esponenziale
Publishing Information
- Imprint Pagination
- 68 p.
- Report number
- CNEN-RT/EL--71-5
INIS
- Country of Publication
- Italy
- Country of Input or Organization
- Italy
- INIS RN
- 3022466
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Bibliography
- Descriptors DEI
- BOLTZMANN EQUATION; DOPED MATERIALS; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- DIFFERENTIAL EQUATIONS; EQUATIONS
Optional Information
- Notes
- 29 refs.