Published June 1974 | Version v1
Journal article

Zero-bias anomaly in GaAs/Mo tunnel junctions

  • 1. Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106

Description

A large zero-bias anomaly has been observed in the point contact tunnel junctions made between a degenerate p-type GaAs and Mo. The anomaly corresponds to a resistance peak centered at zero bias. The junction resistance at zero bias is a strong function of temperature, increasing with decreasing temperature. A quantitative study of the voltage and temperature dependence of the zero-bias anomaly has been made. No effect of the magnetic field up to 12 kG was found. When the temperature was lowered below the transition temperature of Mo, the superconducting energy gap of Mo was observed, which indicated that the mechanism of current flow is by electron tunneling.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
45
Journal Issue
6
Series
J. Appl. Phys.
Journal Page Range
2579-2581
ISSN
0021-8979

Optional Information

Notes
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