Published June 1974
| Version v1
Journal article
Zero-bias anomaly in GaAs/Mo tunnel junctions
Creators
- 1. Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106
Description
A large zero-bias anomaly has been observed in the point contact tunnel junctions made between a degenerate p-type GaAs and Mo. The anomaly corresponds to a resistance peak centered at zero bias. The junction resistance at zero bias is a strong function of temperature, increasing with decreasing temperature. A quantitative study of the voltage and temperature dependence of the zero-bias anomaly has been made. No effect of the magnetic field up to 12 kG was found. When the temperature was lowered below the transition temperature of Mo, the superconducting energy gap of Mo was observed, which indicated that the mechanism of current flow is by electron tunneling.
Additional details
Identifiers
- DOI
- 10.1063/1.1663632;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 45
- Journal Issue
- 6
- Series
- J. Appl. Phys.
- Journal Page Range
- 2579-2581
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 5145050
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ARSENIDES; ENERGY GAP; GALLIUM COMPOUNDS; MOLYBDENUM; SUPERCONDUCTING JUNCTIONS; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent