Influence of doping on the properties of vanadium oxide gel films

The effect of doping with H and W on the properties of V2O5 and VO2 derived from V2O5 gel has been studied. It is shown that the treatment of V2O5 in low-temperature RF hydrogen plasma for 1-10 min leads to either hydration of vanadium pentoxide or its reduction (depending on the treatment conditions) to lower vanadium oxides. For some samples, which are subject to plasma treatment in the discharge active zone, a non-ordinary temperature dependence of resistance, with a maximum at T∼100 K, is observed. For W-doped VO2 films, it is shown that substitution of V4+ with W6+ results in a decrease of the temperature of the metal-insulator transition. Also, it has been shown that the doping of initial films with ∼3 at.% of W reduces the statistical scatter in the threshold parameters of the switching devices with S-shaped I-V characteristics on the basis of V2O5 gel films. (fast track communication)