Published 1999 | Version v1
Journal article Metadata-only

Formation of horizontal and vertical insulation in semiconductors by ion implantation

Creators

  • 1. Institute of Applied Physical Problems, Minsk (Belarus)

Description

The process of buried insulating layers formation in silicon with substoichiometric implantation of nitrogen ions and device insulation in III-V semiconductors are described in this paper. The device insulation in III-V semiconductors can be achieved as a result of modification of crystal properties around of the device structures by polyenergetic or high-energy implantation. (author)

Additional details

Publishing Information

Journal Title
Nukleonika
Journal Volume
44
Journal Issue
2
Journal Page Range
p. 201-206
ISSN
0029-5922

Conference

Title
2. International Symposium on Ion Implantation and other Applications of Ions and Electrons ION'98
Dates
16-19 Jun 1998
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31002190
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DOSE-RESPONSE RELATIONSHIPS; ELECTRICAL PROPERTIES; HELIUM IONS; HYDROGEN IONS; INDIUM PHOSPHIDES; ION IMPLANTATION; MEETINGS; NITROGEN IONS; OXYGEN IONS; SILICON; VACANCIES
Descriptors DEC
CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; SEMIMETALS

Optional Information

Notes
5 refs, 3 figs, 1 tab