The influence of neutron irradiation on CdTe semiconductor detectors
- 1. Osaka Univ., Suita (Japan). Faculty of Engineering
Description
The radiation response of a neutron-irradiated CdTe detector was examined in order to clarify the influence of neutron-induced defects on carrier transport property. Neutron irradiation was performed for a CdTe crystal with the dose from 1.3x109 to 1.6x1010 n/cm2. A pulse height and its risetime were simultaneously measured event by event for 137Cs gamma source in order to evaluate detector performance. Two-dimensional analysis indicated that the pulse height having fast risetime remarkably decreased with neutron fluence. The electron mobility gradually decreased with neutron irradiation, on the other hand, hole transport property was almost unchanged. The experimental results indicated that the electron trapping center was introduced by neutron irradiation and it gave influence on the detector property. (author)
Additional details
Publishing Information
- Journal Title
- Hoshasen
- Journal Volume
- 22
- Journal Issue
- 3
- Journal Page Range
- p. 43-51.
- ISSN
- 0285-3604
- CODEN
- HOSHDJ
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 28007417
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CDTE SEMICONDUCTOR DETECTORS; CRYSTAL DEFECTS; DOSE-RESPONSE RELATIONSHIPS; ELECTRON MOBILITY; GAMMA DETECTION; HOLE MOBILITY; MATHEMATICAL MODELS; NEUTRON BEAMS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; TRAPPING; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; DETECTION; MEASURING INSTRUMENTS; MOBILITY; NUCLEON BEAMS; PARTICLE BEAMS; PARTICLE MOBILITY; RADIATION DETECTION; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; TESTING