Defects analysis of silicon induced by low temperature hydrogen implantation
- 1. Aichi Inst. of Tech., Nagoya (Japan). Faculty of Engineering
- 2. Aichi Inst. of Tech., Nagoya (Japan). Research Institute for Industrial Technology
Description
The change of distribution of defects of silicon induced by hydrogen implantation at 109K was investigated by XTEM and DLTS (Deep Level Transient Spectroscopy) from 80K to 1400K. When the n type silicon was induced by hydrogen at 109K, many kinds of defects were observed. One of defects (EM1) was observed in detail.The total amount of defect of silicon increased with the amount of dope. The vacancy concentration peak of p type silicon was higher than n type one, which was broad and shallow. The defect layer induced by low temperature hydrogen implantation showed broad and shallow vacancy concentration. It was found that the samples with broad and shallow vacancy concentration showed blistering with low frequency. The implantation temperature affected the recovery temperature of defects by annealing. (S.Y.)
Additional details
Publishing Information
- Imprint Title
- Report on progress of researches by common utilization of JAERI nuclear facilities, for fiscal 2001
- Imprint Pagination
- 172 p.
- Journal Page Range
- p. 26-33
- Report number
- UTRCN-G--31
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 35020144
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Non-conventional Literature, Progress Report
- Descriptors DEI
- ANNEALING; BLISTERS; CRYSTAL DOPING; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEPTH; HYDROGEN; ION IMPLANTATION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROGRESS REPORT; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; DOCUMENT TYPES; ELECTRON MICROSCOPY; ELEMENTS; HEAT TREATMENTS; MATERIALS; MICROSCOPY; NONMETALS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE