Published November 2011 | Version v1
Journal article

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

  • 1. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
  • 2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of)

Description

We propose a homogeneous nanoscaled (250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3-x) layer thickness promotes oxygen migration between PCMO3-x and stoichiometric PCMO (PCMO3). The bilayered PCMO structure was confirmed by X-ray photoelectron spectroscopy analysis. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssr.201105317

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi rrl
Journal Volume
5
Journal Issue
10-11
Journal Page Range
p. 409-411
ISSN
1862-6254

Optional Information

Notes
With 3 figs., 15 refs.