Published October 1987 | Version v1
Journal article Metadata-only

Monitoring of SIMOX layer properties and implantation temperature by optical measurements

Creators

  • 1. Laboratories RCA Ltd., Zurich (Switzerland)
  • 2. Surrey Univ., Guildford (UK). Dept. of Electronic and Electrical Engineering
  • 3. David Sarnoff Research Center, Princeton, NJ (USA)

Description

Infrared absorption and Raman scattering measurements of SIMOX (separation by implantation of oxygen) structures implanted at various temperatures yield information on the structure and the strain in both the top silicon and the buried oxide layers. Both techniques can also be used to monitor the implant temperature after the implantation. (author)

Additional details

Publishing Information

Journal Title
Semicond. Sci. Technol.
Journal Volume
2
Journal Issue
10
Series
Semicond. Sci. Technol.
Journal Page Range
687-690
ISSN
0268-1242
CODEN
SSTEE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
19024716
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ABSORPTION; EXPERIMENTAL DATA; HIGH TEMPERATURE; INFRARED RADIATION; ION IMPLANTATION; LAYERS; OPTICAL PROPERTIES; OXIDES; OXYGEN IONS; PHYSICAL PROPERTIES; RAMAN EFFECT; SEMICONDUCTOR DEVICES; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE MONITORING
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; INFORMATION; IONS; MONITORING; NUMERICAL DATA; OXYGEN COMPOUNDS; RADIATIONS; SEMIMETALS