Published June 2009 | Version v1
Journal article Metadata-only

Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

Creators

  • 1. Osaka Electro-Communication University, Neyagawa (Japan)
  • 2. Renesas Design Corp., Itami (Japan)

Description

The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga0.4In0.6P/(Al0.5Ga0.5)0.5In0.5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200881540

Additional details

Identifiers

DOI
10.1002/pssc.200881540;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
Journal Volume
6
Journal Issue
6
Journal Page Range
p. 1517-1519
ISSN
1862-6351

Conference

Title
35. International symposium on compound semiconductors (ISCS 2008)
Dates
21-24 Sep 2008
Place
Rust (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40070353
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM PHOSPHIDES; BAND THEORY; ELECTRONIC STRUCTURE; ENERGY LEVELS; ENERGY SPECTRA; ENERGY-LEVEL TRANSITIONS; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; QUANTUM WELLS; SCHROEDINGER EQUATION; SEMICONDUCTOR LASERS; SPECTRAL REFLECTANCE; TEMPERATURE RANGE 0273-0400 K; VISIBLE SPECTRA
Descriptors DEC
ALUMINIUM COMPOUNDS; DIFFERENTIAL EQUATIONS; EQUATIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; NANOSTRUCTURES; OPTICAL PROPERTIES; PARTIAL DIFFERENTIAL EQUATIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; SPECTRA; TEMPERATURE RANGE; WAVE EQUATIONS

Optional Information

Notes
With 4 figs., 2 tabs., 9 refs.; SICI: 1862-6351(200906)6:6<1517::AID-PSSC200881540>3.0.TX;2-L