Published March 1997 | Version v1
Report Metadata-only

Study of transient current induced by heavy-ion microbeams in Si and GaAs

Creators

  • 1. Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

Description

Heavy-ion microbeams were applied to the study of mechanism of single event upset (SEU). Transient current induced in p+n junction diodes by strike of heavy ion microbeam were measured by using a high-speed digitizing sampling system. (author)

Part of:
Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research

Additional details

Publishing Information

Imprint Title
Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research
Imprint Pagination
553 p.
Journal Page Range
p. 249-252.
Report number
JAERI-Conf--97-003

Conference

Title
7. international symposium on advanced nuclear energy research.
Dates
18-20 Mar 1996.
Place
Takasaki, Gunma (Japan).

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
29000685
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CARBON 12 BEAMS; CHARGE COLLECTION; CHARGE DISTRIBUTION; ELECTRICAL TRANSIENTS; FOCUSING; GALLIUM ARSENIDES; HEAVY IONS; HELIUM 4 BEAMS; MEV RANGE 10-100; OXYGEN 16 BEAMS; P-N JUNCTIONS; SI SEMICONDUCTOR DETECTORS; SILICON
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; GALLIUM COMPOUNDS; ION BEAMS; IONS; MEASURING INSTRUMENTS; MEV RANGE; PNICTIDES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TRANSIENTS

Optional Information