Hg1-xCdxTe doping by ion-beam treatment

Conductivity-type conversion and modification of the electrical properties of p- and n-type Hg1-xCdxTe epitaxial layers subjected to low energy (1.2-1.8 keV) ion-beam treatment have been investigated. The dependence of the conversion depth on the treatment parameters and the material characteristics have been studied. Chemical diffusion of mercury has proved to be the principal process that determines the conversion rate. The electron concentration in the treated Hg1-xCdx Te samples is found to be determined by the overall concentration of the background donor impurities and native donor defects. The latter seem to be generated during the post-growth thermal annealing. (Author)