Published November 3, 2008
| Version v1
Journal article
Si epitaxial growth on self-limitedly B adsorbed Si1-xGex(100) by ultraclean low-pressure CVD system
Creators
- 1. Hitachi Kokusai Electric Inc., 2-1 Yasuuchi, Yatsuo-machi, Toyama 939-2393 (Japan)
- 2. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
Description
B atomic-layer doping in Si/Si1-xGex(100) (x = 0.3, 1) heterostructure utilizing BCl3 reaction on Si1-xGex(100) and subsequent Si epitaxial growth by SiH4 reaction was investigated by ultraclean low-pressure chemical vapor deposition. On 1/3-1/2 atomic layer (2.3-3.5 x 1014 cm-2) B formed Si1-xGex(100) achieved self-limitedly with high Cl coverage, the adsorbed Cl atoms are effectively removed by SiH4 exposure at 300 deg. C after BCl3 exposure. Furthermore, it was found that the SiH4 reaction at 300 deg. C on Ge(100) is enhanced by B adsorption
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.08.012Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.08.012;
- PII
- S0040-6090(08)00821-3;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 1
- Journal Page Range
- p. 229-231
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 5. International conference on silicon epitaxy and heterostructures
- Acronym
- ICSI-5
- Dates
- 20-24 May 2007
- Place
- Marseille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40059001
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON CHLORIDES; CHEMICAL VAPOR DEPOSITION; EPITAXY; GERMANIUM SILICIDES; LAYERS; SILANES; TEMPERATURE RANGE 0400-1000 K; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- BORON COMPOUNDS; CHEMICAL COATING; CHLORIDES; CHLORINE COMPOUNDS; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTRON SPECTROSCOPY; GERMANIUM COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SILICIDES; SILICON COMPOUNDS; SPECTROSCOPY; SURFACE COATING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.