Surface morphology of sputter deposited W-Si-N composite coatings characterized by atomic force microscopy
Creators
- 1. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049 (China)
- 2. Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong, Kowloon, Hong Kong (China)
Description
Tungsten-silicon-nitride (W-Si-N) composite coatings on Si(100) substrates were sputter deposited at various silicon target currents, and their surface morphology was studied with scaling analysis and fractal analysis based on atomic force microscopy (AFM). The root-mean-square (rms) roughness σ, roughness exponent α, the correlation length ξ and the average magnitude of the lateral surface slope ρ decrease with the silicon target current, which is caused by the impeding effect of amorphous Si3N4 on the grain growth of W2N and W5Si3. The competition of surface diffusion and shadowing effect together with other processes drives the formation of columnar grains with mould-like tops. The fractal dimensions obtained using power spectrum method and the R/S method are 2.16 ± 0.04 and 2.15 ± 0.01, respectively, and they both increase with the silicon target current
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2005.07.017;
- PII
- S0921-5107(05)00398-3;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 123
- Journal Issue
- 2
- Journal Page Range
- p. 158-162
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37120584
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; COATINGS; CORRELATIONS; DIFFUSION; ELECTRIC CURRENTS; FRACTALS; GRAIN GROWTH; MORPHOLOGY; ROUGHNESS; SILICON; SILICON NITRIDES; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; TUNGSTEN; TUNGSTEN SILICIDES
- Descriptors DEC
- CURRENTS; ELEMENTS; FILMS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SURFACE PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.