An ESD study of the initial stages of oxide formation at the Si-H2O interface

Interest in the activity of electron beams at surfaces stems from both their deleterious effects in analysis, and the possibility of achieving highly localised control of surface chemistry. In this study, the interfaces formed with water at the (100) and (111) surfaces of silicon are seen to be critically controlled by electron bombardment. An initial stage of surface oxygen production is observed within the irradiated area, which is attributed largely to beam-induced H+ desorption. A second, faster, stage follows, linked to a quasi-catalytic role played by the oxygen layer. (author)