Published March 2019 | Version v1
Journal article

The crystal structure, electronic structure and photoelectric properties of a novel solar cells absorber material Sb2Se3−x S x

  • 1. College of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou 350108, PR (China)
  • 2. Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou 213164, PR (China)
  • 3. College of Materials Science and Engineering, and Key Laboratory of Eco-materials Advanced Technology, Fuzhou University, Fuzhou 350108, PR (China)

Description

Sb2Se3−xSx is considered a promising absorber material for solar cell applications because of its tunable band gap. However, theoretical research on Sb2Se3−xSx is still limited. In this research, the crystal structure, electronic structure and photoelectric properties of Sb2Se3−xSx (x=0, 0.125, 0.25, 0.5, 0.75) were determined using first-principles calculations based on density functional theory. The band gap is affected by the structural distortion and covalence of Sb2Se3−xSx with increasing S concentration. From x=0 to x=0.75, the covalence of Sb2Se3−xSx gradually increases. While for x=0.125 and x=0.25, the structural distortion are more severe than the others. Combining with the affects of both, the band gap decreases first and then increases with increasing S concentration. By calculating the carrier effective masses and optical characteristics of Sb2Se3−xSx, it can be found that Sb2Se3−xSx (x=0.5) shows the optimized photoelectric properties. The results provide some guidance for the further development of Sb2Se3−xSx solar cells by adjusting band gap.

Additional details

Identifiers

DOI
10.1016/j.jssc.2019.01.004;
PII
S0022459619300118;

Publishing Information

Journal Title
Journal of Solid State Chemistry (Print)
Journal Volume
271
Journal Page Range
p. 339-345
ISSN
0022-4596
CODEN
JSSCBI

Optional Information

Copyright
Copyright (c) 2019 Elsevier Inc. All rights reserved.