Published December 15, 2008
| Version v1
Journal article
Band gap bowing parameter of In1-xAlxN
Creators
- 1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
- 2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- 3. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)
Description
We report a band gap bowing parameter for In1-xAlxN of 4.7 eV from a study of high quality and homogenous samples with x=0.017-0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein-Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS
Additional details
Identifiers
- DOI
- 10.1063/1.3039509;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 104
- Journal Issue
- 12
- Journal Page Range
- p. 123501-123501.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40054248
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; ALUMINIUM ALLOYS; ALUMINIUM NITRIDES; ENERGY GAP; INDIUM ALLOYS; INDIUM NITRIDES; NITROGEN ADDITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TERNARY ALLOY SYSTEMS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; ALUMINIUM COMPOUNDS; COHERENT SCATTERING; DIFFRACTION; FILMS; INDIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING; SORPTION; SPECTROSCOPY
Optional Information
- Notes
- (c) 2008 American Institute of Physics