Published April 1975 | Version v1
Journal article Metadata-only

Ion-implanted microwave field-effect transistors in GaAs

Creators

  • 1. Hughes Research Labs., Malibu, Calif. (USA)

Description

no abstract available

Additional details

Identifiers

DOI
10.1016/0038-1101(75)90090-8;

Publishing Information

Journal Title
Solid-State Electronics
Journal Volume
18
Journal Issue
4
Series
Solid-State Electron.
Journal Page Range
349-353
ISSN
0038-1101

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
6187803
Subject category
S07: ISOTOPES AND RADIATION SOURCES; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHROMIUM; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; ION IMPLANTATION; N-TYPE CONDUCTORS; SULFUR IONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; IONS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS; TRANSITION ELEMENTS

Optional Information

Notes
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