Published November 2, 1998
| Version v1
Journal article
Role of electronic structure in magnetic tunneling
- 1. Department of Physics, New York University, 4 Washington Place, New York, NY (United States)
- 2. Institute of Technical Electrochemistry, TU Vienna A-1060 Vienna (Austria)
Description
To assess the effect of electronic structure of magnetic electrodes on the magnetoresistance of tunnel junctions (JMR) we made ab initio calculations of the electronic structure of BCC(1 0 0) Fe, and FCC(1 0 0) Co and Ni electrodes. We treat hopping to and propagation in the barrier as adjustable parameters and discuss features of the JMR attributable to the electronic structure of the electrodes. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)
Additional details
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 189
- Journal Issue
- 2
- Journal Page Range
- p. L131-L135
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43122395
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COBALT; ELECTRONIC STRUCTURE; IRON; MAGNETIC PROPERTIES; MAGNETORESISTANCE; NICKEL; TUNNEL EFFECT
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- This record replaces 31061863