Growth of TiC films by Pulsed Laser Evaporation (PLE) and characterization by XPS and AES

Thin films of TiC with a thickness of some 100 nm have been grown on Si(100) substrates by Pulsed Laser Evaporation (PLE). Advantages of PLE in comparison with more conventional growth methods e.g. PVD or CVD are reported. The feasibility of growing stoichiometric thin films of TiC by PLE was investigated. These films produced have been analysed in situ by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS results and Auger sputter depht profiles indicate that the films grown between RT and 500degC are stoichiometric TiC. Film/substrate interdiffusion is observed at 600degC substrate temperature and higher. (orig.)