Published March 1999 | Version v1
Journal article Metadata-only

X-Ray fluorescence as an in-situ composition monitor during CuInxGa1-xSe2 deposition

Creators

  • 1. Materials Research Group, Inc., 12441 W. 49th Ave., Suite 2, Wheat Ridge, Colorado 80033-1927 (United States)
  • 2. Lockheed Martin Astronautics, P.O. Box 179, Denver, Colorado 80201-0179 (United States)

Description

The principles of x-ray fluorescence (XRF), and differences between the use of XRF as an in-situ composition sensor in CIGS module fabrication and the use of XRF in typical applications, are described. It is demonstrated for measurements on CIGS samples how a number of conditions, including interelement effects and composition gradients, may complicate conversion of XRF signals to composition. Factors controlling the precision of the measurement are enumerated. copyright 1999 American Institute of Physics

Additional details

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
462
Journal Issue
1
Journal Page Range
p. 138-143
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
15. National Center for Photovoltaics program review conference
Dates
9-11 Sep 1998
Place
Denver, CO (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30051717
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL COMPOSITION; COPPER COMPOUNDS; COPPER SELENIDES; DEPOSITION; ERRORS; GALLIUM COMPOUNDS; GALLIUM SELENIDES; INDIUM COMPOUNDS; INDIUM SELENIDES; PHOTOVOLTAIC CELLS; PROCESS CONTROL; SELENIUM COMPOUNDS; THIN FILMS; X-RAY FLUORESCENCE ANALYSIS
Descriptors DEC
CHALCOGENIDES; CHEMICAL ANALYSIS; CONTROL; COPPER COMPOUNDS; DIRECT ENERGY CONVERTERS; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PHOTOELECTRIC CELLS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; X-RAY EMISSION ANALYSIS

Optional Information

Secondary number(s)
CONF-980935--