Published December 1, 2019 | Version v1
Journal article

Effect of morphology features of patterned surface on the nucleation processes of In/GaAs nanostructures during droplet epitaxy

  • 1. Research and Education Center "Nanotechnologies", Southern Federal University, Taganrog 347922 (Russian Federation)
  • 2. Department of Nanotechnologies and Microsystems, Southern Federal University, Taganrog 347922 (Russian Federation)

Description

We present the results of theoretical studies of the self-organization processes of nanoscale metal In droplets on GaAs(001) substrates with artificial structural heterogeneities of various types – with a rectangular, trapezoidal, and triangular shapes. The study showed that to improve the accuracy of nanostructure positioning and homogeneity, it is necessary to use patterns with triangular grooves. In order to ensure the full groove filling by the material and to suppress the undesirable structure formation outside modified areas, it is necessary to provide sufficient diffusion length of adatoms taking into account the peculiarities of the patterned surface morphology. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1410/1/012007

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1410
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
6. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
Acronym
Saint Petersburg OPEN 2019
Dates
22-25 Apr 2019
Place
Saint Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53068028
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S74: ATOMIC AND MOLECULAR PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DIFFUSION LENGTH; DROPLETS; EPITAXY; GALLIUM ARSENIDES; METALS; MORPHOLOGY; NANOSTRUCTURES; NUCLEATION; POSITIONING; SUBSTRATES; SURFACES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; ELEMENTS; GALLIUM COMPOUNDS; LENGTH; PARTICLES; PNICTIDES