Published December 1, 2019
| Version v1
Journal article
Effect of morphology features of patterned surface on the nucleation processes of In/GaAs nanostructures during droplet epitaxy
- 1. Research and Education Center "Nanotechnologies", Southern Federal University, Taganrog 347922 (Russian Federation)
- 2. Department of Nanotechnologies and Microsystems, Southern Federal University, Taganrog 347922 (Russian Federation)
Description
We present the results of theoretical studies of the self-organization processes of nanoscale metal In droplets on GaAs(001) substrates with artificial structural heterogeneities of various types – with a rectangular, trapezoidal, and triangular shapes. The study showed that to improve the accuracy of nanostructure positioning and homogeneity, it is necessary to use patterns with triangular grooves. In order to ensure the full groove filling by the material and to suppress the undesirable structure formation outside modified areas, it is necessary to provide sufficient diffusion length of adatoms taking into account the peculiarities of the patterned surface morphology. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1410/1/012007Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1410
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 6. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
- Acronym
- Saint Petersburg OPEN 2019
- Dates
- 22-25 Apr 2019
- Place
- Saint Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53068028
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DIFFUSION LENGTH; DROPLETS; EPITAXY; GALLIUM ARSENIDES; METALS; MORPHOLOGY; NANOSTRUCTURES; NUCLEATION; POSITIONING; SUBSTRATES; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIMENSIONS; ELEMENTS; GALLIUM COMPOUNDS; LENGTH; PARTICLES; PNICTIDES