Published October 2000
| Version v1
Journal article
β-Sic growth on Si by reactive-ion molecular beam epitaxy
- 1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 842 39 Bratislava (Slovakia)
Description
A novel technique of reactive-ion molecular beam epitaxy for the Si carbonization is demonstrated. For a suggested temperature regime and technological recipe, stoichiometric β-Si C was obtained. This was proved by an in-situ diffraction patterns observation and after process X-ray photoelectron spectroscopy and atomic-force microscopy investigation. (Author)
Additional details
Publishing Information
- Journal Title
- Acta Physica Slovaca
- Journal Volume
- 50
- Journal Issue
- 5
- Journal Page Range
- p. 545-548
- ISSN
- 0323-0465
- CODEN
- APSVCO
Conference
- Title
- Workshop on Solid State Surfaces and Interfaces II
- Dates
- 20-22 Jun 2000
- Place
- Bratislava (Slovakia)
INIS
- Country of Publication
- Slovakia
- Country of Input or Organization
- Slovakia
- INIS RN
- 32035879
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DIFFRACTION; IN-SITU PROCESSING; MICROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON SPECTROSCOPY; EPITAXY; PROCESSING; SCATTERING; SPECTROSCOPY
Optional Information
- Contract/Grant/Project number
- Grant No. FF1/96090
- Notes
- 7 refs., 4 figs.