Published November 1, 1984
| Version v1
Journal article
Hydrogen passivation of silicon sheet solar cells
Description
Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm2 exhibits a maximum at approximately 1400-eV ion beam energy
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 45
- Journal Issue
- 9
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 971-973
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16033939
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- HYDROGEN IONS 1 PLUS; IMPURITIES; ION BEAMS; ION COLLISIONS; KEV RANGE 01-10; PASSIVATION; PHYSICAL RADIATION EFFECTS; REFLECTION; SILICON; SILICON SOLAR CELLS; SPUTTERING
- Descriptors DEC
- BEAMS; CATIONS; CHARGED PARTICLES; COLLISIONS; DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTS; ENERGY RANGE; EQUIPMENT; HYDROGEN IONS; IONS; KEV RANGE; RADIATION EFFECTS; SEMIMETALS; SOLAR CELLS