Published 1987
| Version v1
Miscellaneous
Study of the thermal diffusion of ion-alloyed cesium in aluminium, silicon and titanium by the Rutherford backscattering method
Creators
- 1. Moskovskij Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel'skij Inst. Yadernoj Fiziki
Description
Thermal diffusion of cesium implanted at 120 keV energy in monocrystal silicon and in polycrystal aluminium and titanium is investigated by the method of Rutherford backscattering (RBS). Parameters of temperature dependence of the cesium diffusion coefficient in materials given above are determined. Cesium is shown to be one of the most movable impurities
Additional details
Additional titles
- Original title (Russian)
- Исследование термической диффузии ионно-легированного цезия в алюминии, кремнии и титане методом ROR
Publishing Information
- Imprint Title
- General and nuclear physics
- Journal Issue
- no. 1(37
- Series
- Voprosy atomnoj nauki i tekhniki.
- Journal Page Range
- p. 51-53.
- Report number
- INIS-SU--37/A
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20031194
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ANNEALING; BACKSCATTERING; CESIUM IONS; HELIUM IONS; HIGH TEMPERATURE; HYDROGEN IONS; ION IMPLANTATION; KEV RANGE 100-1000; MONOCRYSTALS; POLYCRYSTALS; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE; THERMAL DIFFUSION; TITANIUM; VERY HIGH TEMPERATURE
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTALS; DIFFUSION; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; METALS; SCATTERING; SEMIMETALS; TRANSITION ELEMENTS
Optional Information
- Notes
- 7 refs.; 2 figs.; 2 tabs. Imprint:Obshchaya i yadernaya fizika.;Nauchno-tekhnicheskij sbornik.