Published February 2, 2000 | Version v1
Journal article

Electrical and optical properties of copper nitride thin films prepared by reactive D C magnetron sputtering

  • 1. Faculty of Chemical Technology, Slovak University of Technology, 812 37 Bratislava (Slovakia)
  • 2. Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, 812 19 Bratislava (Slovakia)
  • 3. Institute of Physics, Slovak Academy of Science, 842 28 Bratislava (Slovakia)

Description

Copper nitride films were deposited by reactive D C magnetron sputtering onto glass and other substrates in nitrogen atmosphere. Thickness, deposition rate, refractive index and optical band gap energy were determined from reflection and transmission spectroscopy depending on the deposition pressure and power. The crystallographic nature of films was investigated by x-ray diffraction The films were further characterized by photoelectron spectroscopy and multiple internal reflection infrared spectroscopy, where the presence of Cu3N nanocrystalline structure was confirmed. Considerable changes of D C conductivity and activation energy of the films before and after annealing at 5000 C were found

Additional details

Publishing Information

Journal Title
Acta Physica Slovaca
Journal Volume
51
Journal Issue
1
Journal Page Range
p. 35-43
ISSN
0323-0465
CODEN
APSVCO

Conference

Title
Workshop on Solid State Surfaces and Interfaces II
Dates
20-22 Jun 2000
Place
Bratislava (Slovakia)

Optional Information

Contract/Grant/Project number
Grant No. G 1/6156/99; and 1/7614/20
Notes
11 refs., 11 figs., 1 tab.