Published January 14, 2006 | Version v1
Journal article Metadata-only

Single photon emission from SiV centres in diamond produced by ion implantation

Creators

  • 1. Sektion Physik, Ludwig-Maximillians-Universitaet Muenchen, D-80799 Munich (Germany)
  • 2. Max-Planck-Institut fuer Quantenoptik, D-85748 Garching (Germany)
  • 3. Experimentalphysik III, Ruhr-Universitaet-Bochum, D-44780 Bochum (Germany)

Description

We report the observation of single photon emission from single SiV (silicon-vacancy) centres in diamond produced by ion implantation. The high photostability and the narrow emission bandwidth of about 5 nm at room temperature make SiV centres interesting as a single photon source in practical quantum cryptography. We discuss problems that arise from the nonradiaditve transitions which lower the brightness of the source

Availability note (English)

Available online at http://stacks.iop.org/0953-4075/39/37/b6_1_005.pdf or at the Web site for the Journal of Physics. B, Atomic, Molecular and Optical Physics (ISSN 1361-6455) http://www.iop.org/

Additional details

Identifiers

URL
http://stacks.iop.org/0953-4075/39/37/b6_1_005.pdf;
DOI
10.1088/0953-4075/39/1/005;
PII
S0953-4075(06)04241-6;

Publishing Information

Journal Title
Journal of Physics. B, Atomic, Molecular and Optical Physics
Journal Volume
39
Journal Issue
1
Journal Page Range
p. 37-41
ISSN
0953-4075
CODEN
JPAPEH

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37053641
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
BRIGHTNESS; DIAMONDS; ION IMPLANTATION; PHOTON EMISSION; PHOTONS; QUANTUM CRYPTOGRAPHY; SILICON; TEMPERATURE RANGE 0273-0400 K; VACANCIES
Descriptors DEC
BOSONS; CARBON; CRYPTOGRAPHY; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; MASSLESS PARTICLES; MINERALS; NONMETALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; POINT DEFECTS; SEMIMETALS; TEMPERATURE RANGE