Published 2002
| Version v1
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Study of influence of thermal treatment on lifetime of charge carriers in silicon doped by nickel
Creators
- 1. Institute of Nuclear Physics AS RU, Tashkent (Uzbekistan)
Description
no abstract available
Files
38115495.pdf
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Additional details
Additional titles
- Original title (Russian)
- Исследование влияния характера термообработки на время жизни носителей заряда в кремнии, легированном никелем
Publishing Information
- Publisher
- Oezbekiston Respublikasi Fanlar Akademiyasi Yadro Fizikasi Instituti
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Book of abstracts of republic conference of young physicists of Uzbekistan
- Imprint Pagination
- 103 p.
- Journal Page Range
- p. 57-58
- Report number
- INIS-UZ--125
Conference
- Title
- Republic conference of young physicists of Uzbekistan
- Original Conference Title
- Respublikanskaya konferentsiya molodykh fizikov Uzbekistana
- Dates
- 3-4 Dec 2002
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 38115495
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; DOPED MATERIALS; HALL EFFECT; N-TYPE CONDUCTORS; NICKEL; SCHOTTKY BARRIER DIODES; SILICON; TEMPERATURE RANGE 1000-4000 K; TRACE AMOUNTS
- Descriptors DEC
- ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Notes
- Imprint:Sbornik tezisov respublikanskoj konferentsii molodykh fizikov Uzbekistana