The formation mechanisms and optical characteristics of GaSb quantum rings
- 1. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China)
- 2. College of Photonics, National Chiao-Tung University, Tainan 711, Taiwan (China)
- 3. Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)
- 4. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
- 5. Department of Photonics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)
Description
The growth mechanisms and optical characteristics of GaSb quantum rings (QRs) are investigated. Although As-for-Sb exchange is the mechanism responsible for the dot-to-ring transition, significant height difference between GaSb quantum dots (QDs) and QRs in a dot/ring mixture sample suggests that the dot-to-ring transition is not a spontaneous procedure. Instead, it is a rapid transition procedure as long as it initiates. A model is established to explain this phenomenon. Larger ring inner diameters and heights of the sample with longer post Sb soaking time suggest that As-for-Sb exchange takes places in both vertical and lateral directions. The decreasing ring densities, enlarged ring inner/outer diameters and eventually flat GaSb surfaces observed with increasing growth temperatures are resulted from enhanced adatom migration and As-for-Sb exchange with increasing growth temperatures
Additional details
Identifiers
- DOI
- 10.1063/1.4817419;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 114
- Journal Issue
- 5
- Journal Page Range
- p. 053509-053509.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45039211
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- GALLIUM ANTIMONIDES; LAYERS; MIXTURES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; CRYSTAL GROWTH METHODS; DISPERSIONS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC