Published August 7, 2013 | Version v1
Journal article

The formation mechanisms and optical characteristics of GaSb quantum rings

  • 1. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan (China)
  • 2. College of Photonics, National Chiao-Tung University, Tainan 711, Taiwan (China)
  • 3. Department of Electrophysics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)
  • 4. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  • 5. Department of Photonics, National Chiao-Tung University, Hsinchu 300, Taiwan (China)

Description

The growth mechanisms and optical characteristics of GaSb quantum rings (QRs) are investigated. Although As-for-Sb exchange is the mechanism responsible for the dot-to-ring transition, significant height difference between GaSb quantum dots (QDs) and QRs in a dot/ring mixture sample suggests that the dot-to-ring transition is not a spontaneous procedure. Instead, it is a rapid transition procedure as long as it initiates. A model is established to explain this phenomenon. Larger ring inner diameters and heights of the sample with longer post Sb soaking time suggest that As-for-Sb exchange takes places in both vertical and lateral directions. The decreasing ring densities, enlarged ring inner/outer diameters and eventually flat GaSb surfaces observed with increasing growth temperatures are resulted from enhanced adatom migration and As-for-Sb exchange with increasing growth temperatures

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
114
Journal Issue
5
Journal Page Range
p. 053509-053509.5
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45039211
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
GALLIUM ANTIMONIDES; LAYERS; MIXTURES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SURFACES
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; CRYSTAL GROWTH METHODS; DISPERSIONS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES

Optional Information

Notes
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