Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix

Electron emission from multilayer arrays of vertically coupled InAs quantum dots into the n-GaAs matrix in Schottky-barrier structures (electron concentration n ∼ 2 x 1016 cm-3) is studied by admittance spectroscopy. It is established that, in the temperature region below ∼70 K, electron emission in a rate range of 3 x 104-3 x 106 s-1 proceeds via thermally activated tunneling through intermediate virtual states. As the number of layers in the quantum dot array increases from three to ten, a decrease in the electron emission rate is observed.