On recrystallization of laminated film Cu-Mo materials

Recrystallization processes in Cu-Mo laminated films prepared by deposition in vacuum are studied. Recrystallization and recovery proceed intensively in as-deposited specimens, but they are decelerated at following annealing up to 900 K due to high volumetric density of Cu-Mo low-energy interfaces. Dispersing into particles takes place at temperature increase depending on the thickness of Mo interlayer, that results in growth of grain sizes in copper layers and decrease of yield strength