Published May 2009 | Version v1
Journal article Metadata-only

Half-metallic ferrimagnet formed by substituting Fe for Mn in semiconductor MnTe

Creators

  • 1. Beijing National Laboratory for Condensed Matter Physics (China)
  • 2. Institute of Physics, Chinese Academy of Science, Beijing (China)

Description

A ternary ferrimagnetic half-metal, constructed through substituting 25% Fe for Mn in zincblende semiconductor MnTe, is predicted in terms of accurate first-principles calculations. It has a large half-metallic (HM) gap of 0.54 eV and its ferrimagnetic order is very stable against other magnetic fluctuations. The HM ferrimagnetism is formed because the complete moment compensation in the antiferromagnetic MnTe is replaced by an incomplete one in the Fe-substituted MnTe. This should make a novel approach to new HM materials. The half-metal could be fabricated because Fe has good affinity with Mn, and is useful for spintronics. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200844350

Additional details

Identifiers

DOI
10.1002/pssb.200844350;
arXiv
arXiv:0811.2455v1;

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
246
Journal Issue
5
Journal Page Range
p. 1094-1098
ISSN
0370-1972
CODEN
PSSBBD

Conference

Title
32. international conference on theoretical physics
Dates
5-10 Sep 2008
Place
Ustron (Poland)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40048449
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ANTIFERROMAGNETIC MATERIALS; BAND THEORY; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY-LEVEL DENSITY; FCC LATTICES; FERRIMAGNETIC MATERIALS; FERRIMAGNETISM; INTERSTITIALS; IRON TELLURIDES; L-S COUPLING; MAGNETIC DIPOLE MOMENTS; MAGNETIC SEMICONDUCTORS; MANGANESE TELLURIDES; MUFFIN-TIN POTENTIAL; RELATIVISTIC RANGE; SPIN ORIENTATION; THEORETICAL DATA
Descriptors DEC
CALCULATION METHODS; CHALCOGENIDES; COUPLING; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; DATA; DIPOLE MOMENTS; ENERGY RANGE; INFORMATION; INTERMEDIATE COUPLING; IRON COMPOUNDS; MAGNETIC MATERIALS; MAGNETIC MOMENTS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; NUMERICAL DATA; ORIENTATION; POINT DEFECTS; POTENTIALS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS

Optional Information

Notes
With 3 figs., 2 tabs., 30 refs.; SICI: 0370-1972(200905)246:5<1094::AID-PSSB200844350>3.0.TX;2-V