Formation and Shape Transition of Nanostructures on Si(100) surfaces after MeV Sb Implantation
- 1. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)
- 2. IUC-DAEF, University Campus, Khandwa Road, Indore (India)
Description
We have studied the formation of nanostructures on Si(100) surfaces after 1.5-bar MeV Sb implantation. Scanning Probe Microscopy has been utilized to investigate the ion implanted surfaces. We observe the formation of nanostructures after a fluence of 1x1013-bar ions/cm2. These surface structures are elliptical in shape with an eccentricity of 0.86 and their major and minor axes having dimensions of about 11.6-bar nm and 23.0-bar nm, respectively. The area of the nanostructure is 210-bar nm2at this fluence. Although the nanostructures remain of elliptical shape, their area increase with increasing fluence. However, after a fluence of 5x1014-bar ions/cm2 a transition in shape of nanostructures is observed. Nanostructures become approximately circular with an eccentricity of 0.19 and a diameter of about 30.1-bar nm. At this fluence we also observe a large increase in the area of the nanostructures to 726-bar nm2. Surface morphology and surface roughness of the ion implanted surfaces has also been discussed
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2006.01.049;
- arXiv
- arXiv:cond-mat/0504225v1;
- PII
- S0169-4332(06)00116-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 253
- Journal Issue
- 3
- Journal Page Range
- p. 1116-1121
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38106168
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONY; ATOMIC FORCE MICROSCOPY; ION IMPLANTATION; IONS; MEV RANGE 01-10; NANOSTRUCTURES; SILICON; SURFACES
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; METALS; MEV RANGE; MICROSCOPY; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.