Published July 1980
| Version v1
Journal article
Electron and hole diffusion constant in Si obtained by light forced scattering
- 1. Rio de Janeiro Univ. (Brazil)
- 2. Technische Univ. Berlin (Germany, F.R.)
Description
no abstract available
Additional details
Additional titles
- Original title (Portuguese)
- Obtencao da constante de difusao de eletrons e buracos no Si por espalhamento forcado de luz
Publishing Information
- Journal Title
- Cienc. Cult. (Sao Paulo)
- Journal Volume
- 32
- Journal Issue
- 7
- Series
- Cienc. Cult. (Sao Paulo).;Supl.
- Journal Page Range
- 261
- ISSN
- 0009-6725
Conference
- Title
- 32. Annual Meeting of the Brazilian Society for the Advancement of Science.
- Dates
- 6 - 12 Jul 1980.
- Place
- Rio de Janeiro, Brazil.
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 12625699
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- DIFFUSION; ELECTRONS; HOLES; LASER RADIATION; OPTICAL PUMPING; SILICON
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; RADIATIONS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only.