Published 1979
| Version v1
Miscellaneous
Ion current density and target temperature effects on radiation defect production under ion bombardment of semiconductor crystals
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Влияние плотности ионного тока и температуры мишени на радиационное дефектообразование при ионной бомбардировке полупроводниковых кристаллов
Publishing Information
- Imprint Title
- Preliminary programme and summaries of reports of 10. Conference on problems of charged particles beams application for studying the composition and properties of the matter
- Journal Page Range
- p. 97-98.
- Report number
- INIS-SU--107
Conference
- Title
- 10. Conference on problems of charged particles beams application for studying the composition and properties of the matter.
- Dates
- 28 - 30 May 1979.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 14715789
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CURRENT DENSITY; ION IMPLANTATION; NUMERICAL SOLUTION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; POINT DEFECTS; RADIATION EFFECTS
Optional Information
- Notes
- Short note. Imprint:Predvaritel'naya programma i tezisy dokladov 10. Soveshchaniya po problemam primeneniya puchkov zaryazhennykh chastits dlya izucheniya sostava i svojstv veshchestva.;Tezisy dokladov.