Published January 27, 2010 | Version v1
Journal article

Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

  • 1. Department of Physics and Astronomy, University of Delaware, Newark, DE 19711 (United States)
  • 2. Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716 (United States)
  • 3. State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  • 4. School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Description

We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/43/3/035002

Additional details

Identifiers

DOI
10.1088/0022-3727/43/3/035002;
PII
S0022-3727(10)23576-3;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
43
Journal Issue
3
Journal Page Range
[8 p.]
ISSN
0022-3727
CODEN
JPAPBE