Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO
Creators
- 1. Department of Physics and Astronomy, University of Delaware, Newark, DE 19711 (United States)
- 2. Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716 (United States)
- 3. State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
- 4. School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Description
We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/43/3/035002Additional details
Identifiers
- DOI
- 10.1088/0022-3727/43/3/035002;
- PII
- S0022-3727(10)23576-3;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 43
- Journal Issue
- 3
- Journal Page Range
- [8 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42059499
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COBALT IONS; DOPED MATERIALS; FERROMAGNETISM; INTERSTITIALS; PARAMAGNETISM; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; ZINC; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; IONS; MAGNETISM; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; TEMPERATURE RANGE; ZINC COMPOUNDS