Published September 1979
| Version v1
Journal article
Single crystals with compositions in the range TiBsub(1.89) - TiBsub(1.96) prepared by chemical transport
Creators
- 1. Ecole Nationale Superieure de Chimie, 31 - Toulouse (France)
- 2. Centre d'Information de Thermodynamique Chimique Minerale, Laboratoire de Thermodynamique et Physico-chimie Metallurgique, Associe au Centre National de la Recherche Scientifique, Saint Martin d'Heres (France)
Description
Chemical vapour transport appears to be a suitable method for growing TiB2 single crystals. In the present work the influence of the transporting agent was especially investigated. By both experimentation and thermodynamic calculations the authors determined suitable growth conditions for using I2, BI3, TeCl4 and BBr3 as transporting agents. For similar quantities of transporting agent and temperature range the transport reaction can be endothermic or exothermic, and variable amounts of diboride are transported. (Auth.)
Additional details
Publishing Information
- Journal Title
- J. Less-Common Met.
- Journal Volume
- 67
- Journal Issue
- 1
- Series
- J. Less-Common Met.
- Journal Page Range
- 107-114
- ISSN
- 0022-5088
Conference
- Title
- 6. International symposium on boron and borides.
- Dates
- 9 - 12 Oct 1978.
- Place
- Varna, Bulgaria.
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 11530940
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EXPERIMENTAL DATA; MONOCRYSTALS; TABLES; TITANIUM BORIDES; VERY HIGH TEMPERATURE
- Descriptors DEC
- BORIDES; BORON COMPOUNDS; CHEMICAL COATING; CRYSTALS; DATA; DATA FORMS; DEPOSITION; INFORMATION; NUMERICAL DATA; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS