Published April 1997 | Version v1
Miscellaneous Open

Influence of ionizing radiation on the parameters of photosensitive films on the basis of gallium arsenide, gallium phosphide and cadmium telluride doped by selenium and zinc

  • 1. Ferganskij Politekhnicheskij Inst., Fergana (Uzbekistan)

Description

The influence of electron fluxes, X-radiation, ultraviolet and laser radiation on parameters of photosensitive films on the basis of gallium arsenide, gallium phosphide and cadmium telluride doped by selenium and zinc was studied. The analysis of the measurements of photoelectrical and photocapacity parameters have shown that ionizing radiation change the photoelectrical parameters of semiconductor films

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Part of:
Abstracts of the International conference 'Problems of theoretical physics and physics of solid state'

Additional details

Additional titles

Original title (Russian)
Влияние ионизирующих излучений на параметры фоточувствительных пленок на основе арсенида галлия, фосфида галлия и теллурида кадмия, легированного селеном и цинком

Publishing Information

Imprint Title
Abstracts of the International conference 'Problems of theoretical physics and physics of solid state'
Imprint Pagination
177 p.
Journal Page Range
p. 64
Report number
INIS-UZ--063

Conference

Title
International conference on problems of theoretical physics and physics of solid state
Dates
24-26 Apr 1997
Place
Bukhara (Uzbekistan)

Optional Information

Notes
1 refs. Imprint:Tezisy dokladov Mezhdunarodnoj konferentsii 'Problemy teoreticheskoj fiziki i fiziki tverdogo tela'