Published March 2009 | Version v1
Journal article

Polysilicon MEMS accelerometers exposed to shocks: numerical–experimental investigation

  • 1. Dipartimento di Ingegneria Strutturale, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)
  • 2. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

Description

In this work the response of a commercial polysilicon MEMS accelerometer subject to shocks in the range 90–5500 g (g being the gravity acceleration) is studied. In situ measurements are compared with results of numerical simulations, obtained via a two-degrees-of-freedom model of sensor dynamics. It is shown that, despite several sources of nonlinearities, the numerical model can capture the main features of the MEMS transient response. The tested devices did not show malfunctioning, even when subject to acceleration peaks 100 times greater than those characterizing the working regime

Availability note (English)

Available from http://dx.doi.org/10.1088/0960-1317/19/3/035023

Additional details

Identifiers

DOI
10.1088/0960-1317/19/3/035023;
PII
S0960-1317(09)88852-9;

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Journal Volume
19
Journal Issue
3
Journal Page Range
[12 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44099371
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACCELERATION; ACCELEROMETERS; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; DEGREES OF FREEDOM; ELECTROMECHANICS; EQUIPMENT; MICROSTRUCTURE; NONLINEAR PROBLEMS; SENSORS; SILICON
Descriptors DEC
ELEMENTS; EVALUATION; MEASURING INSTRUMENTS; MECHANICS; SEMIMETALS; SIMULATION