Published March 2009
| Version v1
Journal article
Polysilicon MEMS accelerometers exposed to shocks: numerical–experimental investigation
Creators
- 1. Dipartimento di Ingegneria Strutturale, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)
- 2. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
Description
In this work the response of a commercial polysilicon MEMS accelerometer subject to shocks in the range 90–5500 g (g being the gravity acceleration) is studied. In situ measurements are compared with results of numerical simulations, obtained via a two-degrees-of-freedom model of sensor dynamics. It is shown that, despite several sources of nonlinearities, the numerical model can capture the main features of the MEMS transient response. The tested devices did not show malfunctioning, even when subject to acceleration peaks 100 times greater than those characterizing the working regime
Availability note (English)
Available from http://dx.doi.org/10.1088/0960-1317/19/3/035023Additional details
Identifiers
- DOI
- 10.1088/0960-1317/19/3/035023;
- PII
- S0960-1317(09)88852-9;
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering. Structures, Devices and Systems
- Journal Volume
- 19
- Journal Issue
- 3
- Journal Page Range
- [12 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44099371
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACCELERATION; ACCELEROMETERS; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; DEGREES OF FREEDOM; ELECTROMECHANICS; EQUIPMENT; MICROSTRUCTURE; NONLINEAR PROBLEMS; SENSORS; SILICON
- Descriptors DEC
- ELEMENTS; EVALUATION; MEASURING INSTRUMENTS; MECHANICS; SEMIMETALS; SIMULATION