Barrier height of anisotype heterojunction in presence of interface states and deep level impurities

A theoretical model on the barrier height of anisotrope heterojunction is proposed considering the presence of both the interface states and the deep level impurities. The Fermi level pinning in these structure is found to be dependent on the interface state density, the shallow and deep impurity concentrations and the characteristics energy of the two crystallites originally proposed by Tersoff. It is seen that, in addition to the interface states, the barrier height of the system is sensitive to the deep level impurities. (authors)