Recoil damage in InSb and InP observed by perturbed angular correlation with 111Cd

The recoil damage caused by the 113In 4.28% (γ, 2n) 111In reaction has been investigated in InSb and InP by means of time-differential perturbed-angular-correlation (TDPAC) measurements on the 247 keV (5/2)+ state of 111Cd, with 111In parent probe atoms internally implanted by the reaction. The fractions of unperturbed components have been found to be substantially smaller than those of perturbed components. It follows that the 111In recoils stop in a disordered zone, since no chemical preference exists for the probe atom before the decay. Axially symmetric electric field gradients of 15.7 +- 0.7 MHz in InSb and 19.2 +- 0.8 MHz in n- and p-type InP have been resolved after irradiations, indicative of the presence of defect-species-like ion pairs. More complicated defect introduction has been found in InP under a higher influence. The presence of probe atoms with 5p dangling bonds has been demonstrated in irradiated materials by large field gradients of hardcore values greater than about 450 MHz. This is in accord with an observation of the 119Sn* Moessbauer effect in InSb exhibiting a quadrupole splitting of 1.1 + - 0.1 mm s-1 for 119Sb parent probe atoms created from the decay and recoil of a 121Sb 57.25% (γ, 2n). The points of 50% recovery have been located at around 2500C for InSb and 4500C for InP. The defect interactions during the course of annealing seem to be complex. (author)