Response of nanocrystalline 3C silicon carbide to heavy-ion irradiation

Nanostructured materials are generally believed to be more radiation resistant. This study reports on Au-ion-induced amorphization in nanocrystalline 3C-SiC, characterized using x-ray diffraction, transmission electron microscopy and Raman spectroscopy. Full amorphization at room temperature occurs at a comparable dose to that for bulk SiC single crystals. The behavior is primarily attributed to a high ion flux and sluggish migration of point defects produced during irradiation. The results may have a significant implication of using nanophased SiC in extremely high radiation environments.