Published 2004 | Version v1
Miscellaneous

Correlation between physico-chemical and electrical properties of annealed Fe/Si(100) contact

  • 1. Surface and Interface Laboratory, Physical Dept., Fac. of Sciences, Setif Univ. (Algeria)
  • 2. Interfaces and thin films laboratory, Mentouri Univ. (Algeria)
  • 3. CRNA (DZ)

Description

Full text.Iron thin films of 1000 A thickness were thermally evaporated onto (100) monocrystalline silicon substrate and annealed under vacuum between 700 and 850 Celsius Degree temperatures for 60 min. In order to follow the elements interdiffusion and to identify the formed iron silicides as well as the sequence of FeSi and FeSi2 silicides growth, the resulting structures were analyzed by Rutherford backscattering using an 3.7 Van de Graaff and θ-2θ x-ray diffraction. Whereas I(V) electrical characteristics permit to study the conduction mechanisms of different structures as function of the nature of the formed silicide

Part of:
Materials science

Additional details

Additional titles

Original title (English)
La science des materiaux

Publishing Information

Imprint Place
Beirut (Lebanon)
Imprint Title
Materials science
Imprint Pagination
420 p.
Journal Page Range
p. 237

Conference

Title
4. Franco-Lebanese conference on materials science (CSM4) International Conference
Original Conference Title
Quatrieme colloque franco-libanais sur la science des materiaux (CSM4) Conference Internationale
Dates
26-28 May 2004
Place
Beirut (Lebanon)

Optional Information

Notes
Imprint:La science des materiaux