Novel p-type Ag-WO3 nano-composite for low-cost electronics, photocatalysis, and sensing: synthesis, characterization, and application

Highlights: • Novel p-type semiconductor composite for low cost electronic, sensing, and photocatalytic devices. • P-type conductivity analysis through photo luminescence (PL) analysis. • Silver nanoparticles serve as a deep acceptor with acceptor level 1.4 eV above the valance band. • Current–voltage graph of Ag-WO₃/Ag Schottky junction with knee voltage 0.59 V. -- Abstract: Semiconductor–metal nanocomposites provide a simple and convenient way to tailor the properties of semiconductors and promote various properties and photoinduced processes like photovoltaic, photo-sensing, and photocatalysis. This article provides a detailed study on the facile synthesis and structural, optical, and electrical characterization of novel p-type silver-tungsten oxide (Ag-WO₃) nanocomposite using co-precipitation technique. Results indicate that it has an indirect bandgap of 2.9 eV and possesses excellent charge separation capability, as established by photoluminescence and impedance spectroscopy analysis. TEM and AFM results show the formation of WO₃ nano-plates with side length ranging from 10 nm to 25 nm, with the presence of silver nanoparticles (dimension 10–12 nm) either at its center or at the edges. P-type conductivity in the synthesized composite is investigated using PL analysis, which revealed that silver serves as a deep acceptor with acceptor level 1.4 eV above the valance band. To further demonstrate the capability of synthesized Ag-WO₃ in electronics, the current–voltage graph of Ag-WO₃/Ag Schottky junction with knee voltage 0.59 V is also summarized, which suggest that Ag-WO₃ is an effective p-type semiconductor for electronic application too. This study provides new insight into the fabrication and practical application of Ag-WO₃ nanocomposite to produce efficient low cost electronic, sensing, and photocatalytic devices.